Abstract
The Cu2SnS3 thin films were deposited using an economic, solution processible, spin coating technique. The films were found to possess a tetragonal crystal structure using X-ray diffraction. The film morphology and the particle size were determined using scanning electron microscopy. The various planes in the crystal were observed using transmission electron microscopy. The optimum band gap of 1.23 eV and a high absorption coefficient of 104 cm−1 corroborate its application as a photoactive material. The visible and infrared (IR) photo response was studied for various illumination intensities. The current increased by one order from a dark current of 0.31 μA to a current of 1.78 μA at 1.05 suns and 8.7 μA under 477.7 mW/cm2 IR illumination intensity, at 3 V applied bias. The responsivity, sensitivity, external quantum efficiency and specific detectivity were found to be 10.93 mA/W, 5.74, 2.47% and 3.47 × 1010 Jones respectively at 1.05 suns and 16.32 mA/W, 27.16, 2.53% and 5.10 × 1010 Jones respectively at 477.7 mW/cm2 IR illumination. The transient photoresponse was measured both for visible and IR illuminations.
Highlights
Image sensors used worldwide rely on visible wavelength photodetectors.[1]
The optimum band gap of 1.23 eV and a high absorption coefficient of 104 cm−1 corroborate its application as a photoactive material
Cu2SnS3 consists of earth abundant and non-toxic elements. It has a band gap in the near IR range from 0.93 to 1.51 eV and a high absorption coefficient of 104 cm−1 to 105 cm−17–10 which yields its use in both IR detection and photovoltaic applications
Summary
Image sensors used worldwide rely on visible wavelength photodetectors.[1]. Infrared (IR) photodetection finds varied use in medical diagnostics,[2] optical fibre communication, night time surveillance,[3] environmental monitoring and remote sensing.[4]. Cu2SnS3 consists of earth abundant and non-toxic elements It has a band gap in the near IR range from 0.93 to 1.51 eV and a high absorption coefficient of 104 cm−1 to 105 cm−17–10 which yields its use in both IR detection and photovoltaic applications. In this paper we have studied the photo response of solution processed Cu2SnS3 thin films under different sun illuminations. The IR photo response for different intensities has been studied proving that Cu2SnS3 can be used as both a visible and IR wavelength photodetector. The photo response of the film was measured under different sun illuminations using an Oriel Sol-3A solar simulator under AM 1.5 G conditions with a KG5 filtered lamp source which was calibrated using an NREL calibrated reference Si visible cell (Oriel P/N-91150 V) to 100 mW/cm[2].
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