Solution-processed bulk heterojunction broadband photodetectors based on perovskites incorporated with PbSe quantum dots

Abstract

Broadband photodetectors (PDs) have great applications in both scientific and industrial sectors. In this study, we report room-temperature operated solution-processed bulk heterojunction (BHJ) broadband PDs based on perovskites incorporated with highly electrically conductive PbSe quantum dots (QDs). The p-type perovskites incorporated with the n-type PbSe QDs forming the BHJ composite thin film not only extend the spectral response up to the infrared region but also balance charge transport of the photoactive layer, resulting in boosted photocurrent and suppressed dark current, consequently, enhanced device performance of the broadband PDs. As a result, the solution-processed BHJ broadband PDs exhibit a responsibility of 10 mA/W, a detectivity of 10 11 Jones (1 Jones = 1 cm ⋅ Hz 1/2 /W), and a linear dynamic range of 53 dB in the spectral response ranging from 350 nm to 2500 nm, where the BHJ broadband PDs are operated at room temperature. These studies indicate that we provide a facile way to develop room-temperature operated solution-processed broadband PDs. • High electrically conductive n-type PbSe quantum dots and p-type CH 3 NH 3 PbI 3 perovskites. • p-type CH 3 NH 3 PbI 3 perovskites incorporated with n-type PbSe quantum dots forming bulk heterojunction composites. • Solution-processed room-temperature operated broadband photodetectors. • Responsibility, detectivity and a linear dynamic range of broadband photodetectors.