Abstract
Amorphous zinc–indium–tin oxide thin-film transistors with various Zn : In : Sn ratios are investigated to improve AC stress stability by suppressing hot carrier effects in the channel layer.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
