Abstract
CoMoCat single-walled carbon nanotubes (SWNTs) treated with diazonium salts can be used to fabricate solution-processable field-effect transistors (FETs) with a full semiconductor device yield. By increasing the network thickness, the effective mobility of the devices can be raised to ∼10 cm2 V−1 s−1 while keeping the on–off ratio higher than 5000. The removal of impurities is essential to achieve high-on–off-ratio devices. This approach is promising for preparation of SWNT inks for printing high-performance devices in flexible electronics.
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