Abstract
The inverse problem of X-ray diffraction on two samples of Al2O3(0001)-GaN-(In0.03GaN-In0.1GaN)x5SL-AlGaN(20 nm) superlattices grown using close technological regimes was numerically solved with allowance for both coherent and diffuse scattering. Detailed profiles of the strain, composition, and defect density in depth of the multilayer structures were obtained, which makes it possible to analyze the process of epitaxial growth and defect formation in mismatched domain heterostructures. Peculiarities of the X-ray diffraction on such structures are considered. It is shown that, in the case of strongly mismatched solid solutions, similarity of the growth procedures does not ensure the formation of nanodimensional periodic systems with identical structural parameters.
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