Abstract
This paper discusses a photo-thermal rotational semiconductor medium with ini?tial stress, and voids by considering two thermoelastic theories: Lord-Shulman and Dual-Phase-Lag models. The equations of motion, temperature, voids, and photothermal have been investigated under two generalized thermoelastic theory. The technique of normal mode has been applied to solve the differential equa?tions system with appropriate boundary conditions. Quantities of physical interest such as displacement, stress components, concentration, temperature, and carrier density are calculated and displayed graphically to demonstrate the effect of the external parameters. The obtained results, by using the two theories, show that the dual-phase-lag theory gives an origin results comparing with obtained results by Lord-Shulman theory. By neglecting the initial stress and voids, and considering the only dual-phase-lag theory, then the results obtained in this paper are deduced to the results of Abbas et al. [1].
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