Solution growth of InGaAlP on Al-pre-deposited GaAs (100) substrates

Abstract

The possibility of the growth of InGaAlP on GaAs substrates by the liquid phase epitaxial growth technique has been investigated. When Al-pre-deposited GaAs substrates were used to charge Al and to grow InGaAlP on them, the quaternary alloys were grown partly on the GaAs (100) substrates at 788°C. The alloy compositions of the grown layers depended on the charged amounts of Al, which were in good agreement with the calculation of an InGaAlP phase diagram. It was possible to grow quaternary layers with Al contents up to 0.2 atomic fractions.