Abstract
Recent calculations of substitutional solute segregation to planar surfaces, voids, and dislocations in fcc metals during irradiation are reviewed. The calculations were based on a kinetic model that included the effects of vacancy and dumbellinterstitial diffusional encounters with solute atoms, diffusion of point defects and bound complexes, and spatially dependent reaction terms. Solute segregation is found to be significant in the temperature range from 0.2 to 0.6 Tm. The temperature for maximum segregation is appreciably higher for heavy-ion bombardment or high-voltage-electron-microscope irradiation rates than for fast-reactor irradiation rates. Segregation is also found to be maximum when the interstitialsolute binding energy is sufficiently high so that the migration energies of the vacancy and interstitial-solute complex become comparable. Furthermore, the magnitude of the segregation effect varies with foil thickness, void size, void number density, dislocation-capture radius, and dislocation density.
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