Abstract
A new method of determining the active dopant solubility limit (ADSL) of implanted dopants in polysilicon is described. ADSL is defined as the concentration of a dopant such that a further increase of the dopant content does not lead to an increase in mobile carrier concentration. The method is based on the idea that the implanted dopant in excess of ADSL does not contribute to the conduction process. The method is simple to employ and is used in the present experiments to determine the ADSL concentration of arsenic and phosphorus implanted in polysilicon.
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