Solubility of hydrogen in silicon at 1300 °C

Abstract

The incorporation of hydrogen in boron doped Czochralski silicon heated to 1300 °C in H2 gas has been studied. The anneal was terminated by a rapid quench to room temperature giving rise to an unknown hydrogen-related defect as well as H-B close pairs. All the hydrogen in the crystal can be driven into such pairs by a low temperature (200 °C) anneal, after which the values of [H-B] [D-B] are in agreement with the total deuterium concentration, measured by secondary ion mass spectrometry. The estimated solubility of 1.5×1016 cm−3 is not affected by the isotopic mass of the hydrogen nor by the presence of boron or oxygen impurities.