Abstract
The aim of this study is to establish the measured concentration of vanadium actually present in the doped crystals as a function of the vanadium concentration determined on the basis of its amount introduced into our (Cd,Mn)Te and CdTe crystals during the growth process. For (Cd,Mn)Te the expected concentration of vanadium varied from 1014 cm−3 to 1020 cm−3. The measurements were performed using the Secondary Ion Mass Spectrometry (SIMS). The measured results for vanadium concentrations from 1014 cm−3 to 3 × 1018 cm−3 differ from the intended ones by not more than a factor of 2 and exhibit the linear relationship. For concentrations above 3 × 1018 cm−3 the measured vanadium concentrations are lower than the nominal ones by more than a factor of 10.
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