Abstract
The form of the solubility curves for tin in both LPE and VPE grown GaAs are rationalised by a thermodynamic model which presumes that the dominant acceptor state due to tin is the donor-gallium vacancy complex Sn GaV − Ga rather than the commonly postulated Sn − As. In LPE growth from tin-rich solutions where the arsenic concentration in the melt exceeds the gallium concentration, very low electron mobilities have been reported and this is shown to arise from auto-compensation of the Sn + Ga donors by the Sn GaV − Ga acceptors.
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