Abstract
The novel green luminescent material of the semiconductive nanoporous ZnMnO thin film was fabricated by grain boundary engineering and thermal stress engineering via the thermal nucleation of the sputter-grown ZnMnO layers. Nanoporous ZnMnO exhibited the strong green luminescence characteristics, attributing to the photon confinement at the localized green-emission band formed near the edge area of ZnMnO nanopores. Using semiconductive nanoporous ZnMnO, two different types of high-performance solid-state lighting devices (i.e., field emission device and light-emitting diode) were demonstrated as tangible applications of semiconductive nanoporous ZnMnO.
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