Abstract
The formation of cadmium sulfide (CdS), a semiconductor used for optoelectronic devices, in the interlayer space of montmorillonite by solid–solid reactions between Cd(II)-montmorillonite and sodium sulfide at room temperature was investigated. The reaction was followed by powder X-ray diffraction (XRD), thermogravimetric-differential thermal analysis (TG-DTA) and TG-mass spectroscopy (TG-MS) analysis of the products. The in situ formation of CdS particle in the interlayer space was indicated by Raman, diffuse reflectance absorption and photoluminescence spectra. The luminescence of the products was weak due to the presence of quenching impurities in montmorillonite.
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