Solid-state disconnects based on SiC power JFETs

Petre Alexandrov ,L Fursin ,X Li ,J.h Zhao ,Christopher Dries ,T Burke

doi:10.1109/vppc.2011.6043095

Solid-state disconnects based on SiC power JFETs

Petre Alexandrov , L Fursin + Show 4 more

https://doi.org/10.1109/vppc.2011.6043095

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Publication Date: Sep 1, 2011

Citations: 5

Affiliation: United Silicon Carbide (United States), Rutgers, The State University of New Jersey, United States Army Combat Capabilities Development Command, United States Army, United States Department of the Army

#Junction Field Effect Transistors #Silicon Carbide + Show 8 more

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Abstract

This work presents the development of a novel bidirectional Solid State Disconnect (SSD) module based on Silicon Carbide (SiC) Junction Field Effect Transistors (JFET) capable of a fast disconnect action upon reaching a preset value of the current through the SSD. Due to the superior properties of SiC material and the low on-resistance of the normally-on SiC JFET, a very low insertion loss can be realized for high power applications. For application in 10kW power systems an insertion loss of less than 0.7% was achieved with a current fall time of 0.26μs for trip currents of about 70A. To the best of our knowledge, there are no other solid-state disconnects available of comparable parameters.

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