Abstract

Summary form only given. The solid immersion lens (SIL) is an aberration-free solid lens of high refractive index material with a truncated-sphere shape. Combining the SIL with a standard optical microscope, PL imaging with high-spatial resolution and high collection efficiency was demonstrated. In this work we applied the SIL to microscopic photoluminescence (micro-PL) spectroscopy and imaging to characterize local electronic properties and real-space carrier migration of sub-/spl mu/m-scale in facet-growth GaAs quantum well (QW) structures.

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