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Abstract
Directionally solidified Si–TaSi2 eutectic in situ composite was fabricated by Bridgman growth technique with a high temperature gradient. The microstructure and solid/liquid interface morphology evolvement were systematically investigated. The grown Si–TaSi2 presents typical semiconductor–metal eutectic structure with the TaSi2 regularly and uniformly embedded into Si matrix. As the solidification rate increases from 6 to 150µm/s, the fiber diameter and eutectic spacing rapidly decrease, whereas the rod density increases. The eutectic spacing and solidification rate obey the relationship of λV0.53=73.7μm1.53/s0.53. Under the optimal solidification parameter (V=100µm/s), the fiber diameter is 1.37μm, average eutectic spacing is 3.83μm, and rod density is 3×106rod/cm2, which well satisfy the requirement of Spindt field emission arrays. Furthermore, the solid/liquid interface undergoes an evolvement of planar-shallow cell–cell with the increase of solidification rate.
Published Version
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