Solid wetting layer, interphase formation, and thin-film nanomaterials. Brief review

Abstract

A review of the results on the formation of the interface between 3d metals and silicon silicides under identical conditions for various parameters of the deposited vapor, crystallographic orientation and substrate temperature is presented. A generalization of the results has been carried out, which consists of the fact that during the process of deposition of hot vapor on a colder substrate, the transition from the surface phase to the bulk phase occurs through a solid wetting layer (SWL). A classification of substrate-stabilized phases, including SWL, is proposed. It has been shown that SWL has an electronic density different from bulk phases, a smooth or nanostructured morphology, optical, electrical, and magnetic properties, and plays an important role in the formation of interfaces between bulk phases, their epitaxial films and multilayer nanostructures. These studies suggest the promise of SWL as a new nanotechnology object for the creation of thin-film nanomaterials. The studied problem is the formation of interfaces in thin-film nanomaterials. The purpose of the article is to substantiate the discovery of nonequilibrium solid wetting layers, their uniqueness and their role in the formation of the above-mentioned interfaces. This is important research for nanomaterial technologies. A review and generalization of the results of the study of the metal–silicon interface obtained under identical conditions was carried out. The review shows the detection a new type of transition state of the film under nonequilibrium conditions, a solid wetting layer, and the generalization justifies its role in the formation of the interface. Solid wetting layers are important as a new concept for the development of the theory of thin film growth, as well as a new object of nanotechnology for the production of thin-film nanomaterials