Abstract
Silicide formation between Si and transition metal films has been widely studied. In a recent paper, Tu I reported that in binary systems of M-Si there was a sequence of silicide formation. It was also reported by Gurp et aL 2 that in a Co-Si system the silicide layer was built up of successive layers of three silicides. This paper describes a preliminary study of silicide formation in the Ti-Si system at temperatures below 700 °C, with some remarks about the sequential growth and the intermediate phase of silicides 3.
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