Abstract
Knowledge of the interaction between a thin metal film and a compound semiconductor can be used to engineer electrical contacts to the semiconductor. In this study, we examine the reaction between a 50 nm layer of Pd and a GaSb substrate annealed at 100–350°C for 10–360 min using transmission electron microscopy (TEM) and x-ray diffraction (XRD). We report on the formation of Pd-rich nanocrystalline and polycrystalline ternary phases at temperatures below 200°C, followed by Pd-Ga and Pd-Sb binary phases above 200°C.
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