Abstract
The phase diagram of Cr-Si-C was investigated by experimental methods (XRD, SEM/EDX) and approximate thermodynamic calculations. Based on these results the stability of the ternary phase Cr 5 Si 3 C (τ) up to 1400°C is confirmed and a tie line between Cr 3 C 2 and SiC is proposed. Bulk diffusion couples of Cr on monocrystalline 6H-SiC were prepared by a special deposition scheme and the interface reactions were studied in the temperature range between 1000 and 1200 °C. The sequence of reaction layers as observed in the diffusion couples, Cr/Cr 23 C 6 /Cr 7 C 3 /Cr 7 C 3 + Cr 3 Si/Cr 3 Si/Cr 5 Si 3 C/SiC, could be related to the isothermal section at 1000°C. Three stability diagrams were constructed for the Cr-Si-C system at 1000 °C. Interpretations pertaining to the observed diffusion paths are discussed based on the ternary solid state equilibria, thermodynamic calculations and the stability maps.
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