Abstract

A solid-state pulse modulator for high-power microwave devices with grid control has been designed and tested. The output stage of this modulator uses a switching unit with two microsecond-band high-voltage switches toggled in antiphase. These switches were constructed on series-connected MOS transistors, have nanosecond switching times, and operate at voltages of as high as 10 kV. The modulator has demonstrated stable operation in tests performed to evaluate its potential to control high-power microwave devices.

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