Abstract
As an emerging technology, memristors are nanoionic-based electrochemical systems that retains their resistance state based on the history of the applied voltage/current. They can be used for on-chip memory and storage, biologically inspired computing, and in-memory computing. However, the underlying physicochemical processes of memristors still need deeper understanding for the optimization of the device properties to meet the practical application requirements. Herein, we review recent progress in understanding the memristive mechanisms and influential factors for the optimization of memristive switching performances. We first describe the working mechanisms of memristors, including the dynamic processes of active metal ions, native oxygen ions and other active ions in ECM cells, VCM devices and ion gel-based devices, and the switching mechanisms in organic devices, along with discussions on the influential factors of the device performances. The optimization of device properties by electrode/interface engineering, types/configurations of dielectric materials and bias scheme is then illustrated. Finally, we discuss the current challenges and the future development of the memristor.
Highlights
Memristor is an abbreviation for memory-resistor, which is a resistive device with the memory property due to its state being a function of the operation history
We review the mechanisms of memristor, with particular attention on the kinetic and thermodynamic processes during the filament evolution
2ω results corresponding through electrostatic force microscopy (EFM) measurement; (f) schematic illustration of formation and dissolution processes of oxygen-deficient nanofilament by electric field induced oxygen ions moving in valence change memory (VCM) device
Summary
Memristor is an abbreviation for memory-resistor, which is a resistive device with the memory property due to its state being a function of the operation history. Were the first to link resistive switches to the physical implementation of memristors with the device structure of Pt/TiO2−x /TiO2 /Pt (Figure 1) Since such devices have aroused ever-increasing research interest and were developed rapidly with both inorganic and organic electronic materials, leading to applications in nonvolatile memory devices [3,4,5,6,7] for information storage in the big-data era beyond Moore’s law, in-memory computing [8,9,10,11,12] for eliminating the energy–intensive and time consuming data movement through the von Neumann communication bottleneck in the data-intensive tasks, biologically inspired synaptic devices [11,13,14,15,16,17,18] for cognitive processing and big-data analysis, as well as hardware security for the era of the Internet of Things (IoT) [19,20,21].
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