Abstract
The components for constructing a Cu-based double-layer element, high-energy-density capacitor and potential memory element were studied. The high-energy capacitor, which is constructed with a carbon polarization electrode and a polyphase counter electrode (Cu 60 wt%) exhibited nearly comparable performance to a Ag-based cell. The potential memory element constructed with three Cu 2S electrodes has ≈1000 times larger capacity; however, the practical potential range is about half that of a Ag-based one.
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