Abstract

The present work demonstrates the usefulness of nickel oxide as a hole transporting material in solid state dye-sensitized solar cells (SSDSSCs). We report on the photovoltaic performances of sensitized TiO 2/NiO heterojunctions, and demonstrate that the TiO 2 film thickness and morphology, as well as NiO film thickness, have significant effects on the photovoltaic behaviour of TiO 2/NiO SSDSSC. Under 1 sun AM1.5G simulated illumination, the SSDSSCs demonstrated best photovoltaic performance with a short circuit photocurrent density, open circuit voltage, fill factor and efficiency of 0.91 mA cm −2, 780 mV, 40% and 0.3%, respectively. This study draws attention to the feasibility of enhancing the photovoltaic performance in SSDSSC devices through development of appropriately designed sensitized TiO 2/NiO heterojunctions.

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