Abstract
The operation principle, fabrication, and measurement results for a stand-alone amplifier based on impact ionization are reported. The device was built in silicon using standard microelectronic processes. Testing was performed by connecting the device to both silicon and indium-gallium-arsenide photodiodes to demonstrate its compatibility with arbitrary current sources. Preamplified leakage currents of less than 1nA were measured along with current gains greater than 100.
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