Abstract
A novel solid source metalorganic chemical vapor deposition (MOCVD) process has been used to grow highly textured thin films of CeO2 and MgO, and highly oriented thin films of Sr1-xBaxNb206 (SBN). Both (100)-oriented and (lll)-oriented CeO2 films were reproducibly grown on (1102)-oriented Al203 (r-plane sapphire) substrates. Higher substrate temperatures and higher growth rates were found to favor the (111) orientation. The epitaxial (100) CeO2 films, 150 A thick, had very smooth surfaces, with an RMS surface roughness of 7 A, as measured by atomic force microscopy. MgO films with (100) orientation were readily grown on both r-plane sapphire and (100) SrTiO3 substrates at temperatures below 600°C. SBN films, 1.6 μm thick, were also grown on r-plane sapphire substrates at 700-800°C using a CeO2 buffer layer and all tetramethylheptanedionate (Sr, Ba, and Nb) metalorganic sources.
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