Abstract
Partial Cr substitution for V in the V4C3TxMXene promotes the capacitance, discharging potential, and cycle stability of in-plane ZMSCs. The device exhibits a high areal energy density of 51.12 μW h cm−2and flexibility index of 100.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have