Abstract
Multilayered [(Co40Fe40B20)34(SiO2)66/ZnO]112, [(Co40Fe40B20)34(SiO2)66/SnO2]32, and [(Co40Fe40B20)34(SiO2)66/In2O3]92 films with layers 1 nm thick are obtained via the ion-beam sputtering of two targets onto a rotating substrate. Their phase transformations are studied during the thermal treatment of films. Compounds with boron form in films with ZnO and In2O3 buffer layers (Co2FeO2(BO3) and InBO3, respectively). The composition of these compounds is found to depend on the semiconductor that is used and the ratio of layer thickness.
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