Abstract
Si+ was implanted into hydrogenated thin amorphous silicon films. After Si+ implantation, the films were changed to the disordered state; correspondingly, the absorbance peaks in the infrared region relating to the Si-Hn stretching mode were all concentrated near 2000 cm-1. Subsequently, as a result of furnace annealing at 600°C, dendritic large and flat grains with improved electronic properties were observed. These are expected to be applicable for large area electronics on low-temperature glass.
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