Abstract
Abstract : Approximate Pt-Ga-As and Pt-Ga-Sb ternary phase diagrams were determined at room temperature with the use of x-ray powder diffraction data. Pt was found to react chemically with both GaAs and GaSb to produce Pt-Ga and Pt/ group-V intermetallic compounds. Each semiconductor formed pseudo-binary systems with at least three different intermetallic compounds. The Pt/GaAs interfacial reactions observed by other investigators are discussed and explained in terms of the bulk phase diagram determined in this study. Ternary phase diagrams; Intermetallic compounds; Metal; Semiconductor junctions; X ray diffraction; Gallium arsenides.
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