Solid phase epitaxial seed for laser-crystallized silicon on glass substrates

Abstract

A new method for obtaining thin silicon film on glass substrates (SOG) has been introduced. This technique uses solid phase epitaxy (SPE) and laser crystallization to fabricate an orientation-controlled SOG structure. Heat treatment of amorphous SOG substrate in contact with mesa striped (100)-oriented Si seed crystal was performed at 543 °C for 16 h to form the SPE layer. The most important feature of the present external seeding technique is the separation of the seed from the substrate after SPE. Successful demonstration of seeded laser crystallization shows the usefulness of the external seed SPE.