Abstract
Solid phase epitaxial regrowth (SPER) of amorphized layer in Czochralski grown silicon (Cz-Si) created by self-implantation (Si+ dose 2x1016 cm-2, energy 150 keV), subsequently annealed for 5 h at up to 1400 K under Ar pressure up to 1.4 GPa, was investigated by Secondary Ion Mass Spectrometry (SIMS) and X-ray methods. Annealing of Cz-Si:Si resulted in pressure-dependent SPER with a marked carbon and oxygen gettering within regrown region. Depth profiling of carbon and oxygen contaminants provides useful information concerning SPER in implanted single crystalline silicon.
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