Solid phase epitaxial growth of Si through Al film

Abstract

Uniform epitaxial growth has been obtained by dissolution and transport of an evaporated Si film through an evaporated Al film at temperatures below 500°C. By analyzing the samples made in different ways we show that the presence of a cap on the metal layer, which inhibits the diffusion of the metal through the evaporated Si, plays a fundamental role. The cap consists of a thin oxide layer grown on top of the metal. The cap is made by leaving the sample in vacuum for two days or by heating the sample in vacuum before the Si deposition. The study of the initial growth rate on 〈100〉 and 〈111〉Si substrates reveals that the growth starts as islands which grow until they coalesce to form a continuous layer. Different growth rates have been obtained by using 〈100〉 and 〈111〉Si substrates. Typical growth rates are 50 Å/min at 330°C on 〈100〉 and 100 Å/min at 392°C on 〈111〉. The activation energy of the process is 1.2 eV.