Abstract
In this paper, the (0001) surface of an InGaO3(ZnO)5 (c-IGZO) single-crystal buffer layer was used as a seed layer to control the orientation of a Si film in solid-phase heteroepitaxial growth at 950 °C. Despite a large lattice misfit of 20%, electron backscattering diffraction (EBSD) and transmission electron microscope (TEM) measurements substantiated that the (111)-oriented Si layers are grown epitaxially on the c-IGZO (0001) surface, which is explained by domain-matched epitaxy. The process can be further developed for low temperature process by utilizing excimer laser annealing to produce highly uniform (111) oriented Si TFT over a large area.
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