Solid-phase crystallization of gallium arsenide thin films on insulators

Abstract

• The grain size and crystal orientation of polycrystalline GaAs on insulators are discussed for the first time. • The precursor conditions dramatically influence the subsequent solid-phase crystallization of GaAs layers. • The GaAs layer crystallizes at 400 °C, developing polycrystalline GaAs layer on a flexible plastic sheet. • The findings can be key parameters for synthesizing polycrystalline compound semiconductors.