Abstract
Solid-Liquid Interdiffusion Bonding between Ti/Ni/Ag/Sn Backside Metallized Si Chips and Cu/Al<sub>2</sub>O<sub>3</sub> - DBC Substrates with Au/Pd/Ni Surface Finish
Highlights
Backside grinding and backside metallization (BGBM) serves as die attach layer that provide excellent ohmic contact, good heat dissipation, and conductivity to integrated circuits (ICs)
The morphology of the diffusion bonding joints at different bonding conditions were shown in Fig. 3, where IMCs in the forms of Ag3Sn and Ni3Sn2 were detected at the bonding interfaces, indicating the reaction mechanism to be the interdiffusion of solid solutions
Sn interlayer diffusion bonding was applied at temperatures of 300oC - 450°C for periods of 15 - 120 minutes to join the Si/Ti/Ni/Ag/Sn chips with DBC Al2O3/Cu/Ni/Pd/Au
Summary
Kuan-Yu Chiu and Pei-Ing Lee1* 1 National Taiwan University, Department of Materials Science and Engineering. Abstract - In recent years, solid-liquid interdiffusion bonding (SLID) had received much interest from semiconductor manufacturers, primarily due to its ability as a reliable die bonding method especially under high temperatures. This paper presented the work in the optimized Si/Ti/Ni/Ag/Sn bonded on DBC Al2O3/Au/Pd/Ni/Cu substrates by SLID in a vacuum environment. The diffusion phenomenon at the bonding interfaces was observed by SEM/EDX. Well-defined layered bond structures with excellent strength exceeding 7.91 MPa were achieved for the Au-Sn SLID system. Intermetallic compounds in the form of Ag3Sn, Ni3Sn4, and Ni3Sn2 were observed at the bonding interface between Si/Ti/Ni/Ag/Sn wafers and DBC substrates. Superior bond strength of the SLID system allows applications in die bonding that fulfill the requirements of commercial semiconductor packaging specifications
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