Solid Diffusion Based Micromachining-Free Transresistive Nanoelectromechanical ROM for High-Speed and Rugged Embedded Applications

Abstract

We demonstrate a prototype of 1 kB high speed and scalable Nanoelectromechanical Read-Only-Memory (NEMS-ROM). The ROM cell current in fused-state is ~100 mA, and the average fused-state resistance is ~67 K ${\Omega } $ (Logic ‘1’), whereas, in the open state (Logic ‘0’), it is $\sim \text{G}~{\Omega } $ . The fabrication of the NEMS-ROM involves the process of solid diffusion for the formation of the sub-nanometer coarse gap. The device fabrication is linearly scalable and is an etch-less process. The proposed NEMS-ROM is insensitive to thermal fluctuations (−100°C to +350 °C). The read delay of the NEMS-ROM unit cell is ~8.2 ps. NEMS-ROM core is suitable for storing the micro-operations for high-speed rugged embedded applications.