Abstract
The Sol-gel route is a versatile method to fabricate multi-layer, dense and homogeneous ZnO thin films with a controlled thickness and defects for a memristive application. In this work, sol-gel derived multi-layer undoped and Al-doped ZnO thin films were prepared by a spin-coating technique on SiO2/Ti/Pt and silica glass substrates. The effect of both Al doping and curing conditions on the structural and morphological features of ZnO films was investigated by complementary techniques, including electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy, micro-Raman spectroscopy, and X-ray diffraction analysis. Electrical measurements were performed on SiO2/Ti/Pt/ZnO/Pt(dishes) and SiO2/Ti/Pt/ZnO(Al)/Pt(dishes) fabricated memristive cells and preliminary current-voltage curves were acquired.
Highlights
A memristor is a fourth fundamental circuit element that was predicted by L
The morphological features of the films deposited on Pt/Ti/SiO2 substrates were analyzed by Field emission scanning electron microscopy (FE-SEM), yielding detailed information regarding the influence of doping and curing conditions on the morphology of the films (Fig.S1 - supplementary material)
An increase of the grain size up to approximately 25 nm was observed with 1% Al sample (Fig.S1c) cured at 250◦C
Summary
A memristor is a fourth fundamental circuit element that was predicted by L. Sol-gel synthesis and characterization of undoped and Al-doped ZnO thin films for memristive application The effects of doping and curing conditions on the morphological and structural properties, influencing the memristive switching performance of ZnO layers, were analyzed.
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