Abstract
Effect of neodymium substitution on the ferroelectric properties of Bi4Ti3O12 was investigated using a sol-gel method. We successfully synthesized 10 wt% homogeneous sol-gel solution of Bi3.15Nd0.85Ti3O12 (BNT) with 12% excess bismuth content. BNT thin films were fabricated on the Pt/TiO2/SiO2/Si substrates by spin coating deposition technique. The final film composition of Bi3.15Nd0.85Ti3O12 was obtained by Rutherford backscattering spectroscopy analysis. The 200-nm-thick BNT films have a strong (117) XRD peak with suppressed (00l) peaks due to the substitution of Nd, and the remanent polarization (2Pr) value of Pt/BNT/Pt structure is 48 μ C/cm2 at 7V, which is significantly greater than those of other ferroelectric thin films such as PZT, SBT and BLT.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
