Abstract
Time-resolved conductivity measurements reveal that a mild hydrogen treatment at 300 °C for 10 minutes successfully extends the lifetime of carriers by more than two-fold in bismuth vanadate (BiVO4) photoelectrodes. This enhancement is a result of passivation of deep trap states and/or reduction of their density. Consequently, the AM1.5 photocurrent and onset potential for the hydrogen-treated BiVO4 are significantly improved. This is reported by Fatwa F. Abdi and co-workers in article number 1701536.
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