Abstract
In this paper, a comparative analysis of three methods to determine the four solar cells parameters (the saturation current (Is), the series resistance (Rs), the ideality factor (n), and the shunt conductance (Gsh)) of the single diode lumped model from its dark curve is presented. These methods are based on Gromov, Werner, and Mikhelashviliet al. methods that were used to extract the Schottky diode parameters. These techniques have been adequately modified, extended to cover the case of solar cells and used to extract the parameters of interest from experimental I-V characteristic of a Poly-Si solar cell under dark condition.
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