Abstract
The method for boron bulk doping of silicon ribbons based on the use of sprayed boric acid as a doping source is particularly suitable for producing p-type silicon ribbons that require zone melting recrystallisation (ZMR). This paper reports on a test of the application of this method for the doping of multicrystalline material that was used as the base material for solar cells. The aim was to study the material deterioration due to the spray doping process. Analysis of solar cell performance, lifetime measurements and GDMS contaminants detection, suggest that the doping process with boric acid solution does not produce detectable deterioration of the material quality compared to the control (non-recrystalised) materials.
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