Abstract
Abstract Vertically aligned nanowire arrays, with high surface-to-volume ratio and efficient light-trapping absorption, have attracted much attention for photoelectric devices. In this paper, vertical β-Ga2O3 nanowire arrays with an average diameter/height of 110/450 nm have been fabricated by the inductively coupled plasma etching technique. Then a metal-semiconductor-metal structured solar-blind photodetector (PD) has been fabricated by depositing interdigital Ti/Au electrodes on the nanowire arrays. The fabricated β-Ga2O3 nanowire PD exhibits ∼10 times higher photocurrent and responsivity than the corresponding film PD. Moreover, it also possesses a high photocurrent to dark current ratio (I light/I dark) of ∼104 and a ultraviolet/visible rejection ratio (R 260 nm/R 400 nm) of 3.5 × 103 along with millisecond-level photoresponse times.
Highlights
Solar-blind region refers to the ultraviolet (UV) radiation with wavelengths of 200–280 nm from the sun, which is strongly absorbed by ozone in the atmosphere and almostThis work is licensed under the Creative Commons Attribution 4.0L
The vertically aligned single-crystalline β-Ga2O3 nanowire arrays have been realized by the inductively coupled plasma (ICP) etching technique, and the metal-semiconductor-metal (MSM) solar-blind PD has been constructed with interdigital Ti/Au electrodes on β-Ga2O3 nanowires
It is evident that Ni nanomask is a good mask to prevent the ICP etching on the β-Ga2O3
Summary
Solar-blind region refers to the ultraviolet (UV) radiation with wavelengths of 200–280 nm from the sun, which is strongly absorbed by ozone in the atmosphere and almost. L. Zhang et al.: β-Ga2O3 solar-blind ultraviolet photodetector. The vertically aligned single-crystalline β-Ga2O3 nanowire arrays have been realized by the ICP etching technique, and the metal-semiconductor-metal (MSM) solar-blind PD has been constructed with interdigital Ti/Au electrodes on β-Ga2O3 nanowires. The photoelectric properties of the fabricated β-Ga2O3 MSM PD based on vertical nanowire arrays structure have been studied and compared with the corresponding β-Ga2O3 film PD. Current–voltage (I–V) characteristics of PDs were evaluated by a semiconductor device analyzer (Keithley 2636B). The transient response characteristics were measured using a 266 nm pulsed laser and a digital oscilloscope (Tektronix TBS 1102)
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