Solar-blind photodetectors based on MXenes–β-Ga2O3 Schottky junctions

Abstract

In this work, high-performance solar-blind photodetectors based on MXenes–β-Ga2O3 Schottky junctions have been developed by utilizing transparent conductive MXenes as the Schottky electrode of β-Ga2O3. Due to the high MXenes–β-Ga2O3 Schottky barrier, the photodetectors exhibit a rectification ratio as high as over 103 at ±2 V. At zero bias, the photodiodes show a responsivity of 12.2 mA W−1 at 248 nm and a detectivity of 6.1 × 1012 Jones, which are among the best values for β-Ga2O3-based solar-blind photodetectors working at zero bias. In addition, the Schottky photodiodes show a fast response speed with a rise time of 8 μs and decay time of 131 μs. Our results indicate that MXenes may be promising candidate for use as transparent conductive electrodes for UV optoelectronics.