Abstract
The MOCVD technology of semiconductor heterostructures for ultraviolet photodetectors was developed. Solar blind AlGaN/GaN MSM photodetectors were fabricated and investigated. Directly on the MSM-diode we have measured a Schottky barrier height of 1.1 eV for Ni and 1.4 eV for Mo contacts on AlGaN. Effect of different buffer layers on the detector performances has been demonstrated. Detectors exhibit low dark currents and high sensitivity within the range of 250 - 290 nm. Effect of high optical excitation level on detector performance is discussed.
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