Abstract
Abstract Solar-blind deep ultraviolet (DUV) photodetectors with high responsivity (R) and fast response speed are crucial for practical applications in astrophysical analysis, environmental pollution monitoring, and communication. Recently, 2D tellurium has emerged as a potential optoelectronic material because of its excellent photoelectric properties. In this study, solar-blind DUV photodetectors are demonstrated based on solution-synthesized and air-stable quasi-2D Te nanosheets (Te NSs). An R of 6.5 × 104 A/W at 261 nm and an external quantum efficiency (EQE) of higher than 2.26 × 106% were obtained, which are highest among most other 2D material-based solar-blind DUV photodetectors. Moreover, the photoelectric performance of the quasi-2D Te-based photodetector exhibited good stability even after ambient exposure for 90 days without any encapsulation. These results indicate that quasi-2D Te NSs provide a viable approach for developing solar-blind DUV photodetectors with ultrahigh R and EQE.
Highlights
The discovery of graphene, the first 2D material, in 2004 [1], led to 2D materials attracting widespread attention because of their unique photoelectric properties, such as strong light absorption [2,3,4], high light sensitivity [5, 6], fast light response speed [7,8,9], and wide light response range [10, 11]
The photoelectric performance of the quasi-2D Te-based photodetector exhibited good stability even after ambient exposure for 90 days without any encapsulation. These results indicate that quasi-2D Te nanosheets (Te NSs) provide a viable approach for developing solar-blind deep ultraviolet (DUV) photodetectors with ultrahigh R and external quantum efficiency (EQE)
The experimental results demonstrate that the Te NS-based field-effect transistors (FETs) exhibit an ultrahigh responsivity (R) of 6.5 × 104 A/W, a remarkable external quantum efficiency (EQE) of 2.26 × 106%, and a high detectivity (D*) of 3.73 × 108 Jones in the solar-blind band (261 nm), which indicate the great potential of Te NSs for high-performance solar-blind DUV photodetectors
Summary
The discovery of graphene, the first 2D material, in 2004 [1], led to 2D materials attracting widespread attention because of their unique photoelectric properties, such as strong light absorption [2,3,4], high light sensitivity [5, 6], fast light response speed [7,8,9], and wide light response range [10, 11]. Xie et al demonstrated a high photoresponse electrochemical photodetector based on liquid phase exfoliation synthesized 2D nonlayered Te NSs for ultraviolet (UV) (350 nm) and visible light (475 nm) [19]. This indicates that despite the band gap of Te NSs being 0.35 eV, it can obtain UV light response. The optical and optoelectronic properties of solution-synthesized quasi-2D Te NSs are experimentally studied Both the absorption and the photoresponse results confirm that quasi-2D Te NSs are solar-blind DUV sensitive materials. The experimental results demonstrate that the Te NS-based FETs exhibit an ultrahigh responsivity (R) of 6.5 × 104 A/W, a remarkable external quantum efficiency (EQE) of 2.26 × 106%, and a high detectivity (D*) of 3.73 × 108 Jones in the solar-blind band (261 nm), which indicate the great potential of Te NSs for high-performance solar-blind DUV photodetectors
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