Solar and infrared light sensing comparison of Yb/CIGS photodiode

Abstract

Glass/Mo/CIGS/Yb Schottky photodiodes were fabricated by the physical vapor deposition method. The structural and morphological characterization of the CIGS layer on Mo was carried out. The current-voltage ( I-V ) characteristics were investigated in the dark, under solar light, and infrared. The diodes' ideality factor and zero bias barrier height were calculated as 1.55 and 0.84 eV in the dark, respectively. When the time-dependent current plots are examined, it is seen that the rise and decay times are lower for solar light than infrared. As the intensity of solar light increases, the rise and decay times decrease. The responsivity value for 100 mW/cm 2 solar light was found to be 8.5 mA/W and the detectivity value was 1.7 × 10 7 Jones. For infrared light, the same parameters were calculated as 3.4 mA/W and 7.1 × 10 6 Jones. Furthermore, capacitance-voltage and conductance-voltage characteristics were evaluated for different frequencies. • Yb/CIGS photosensor was produced on bi-layer Mo layer. • Switch ON−OFF time was maintained at 5 s • I-t and C-t measurements taken at different solar light intesities (from 20 to 100 mW/cm 2 ) and infrared (100 mW/cm 2 ). • Responsivity and detectivity parameters were calculated. • Frequency−dependent C-V and G-V characteristics investigated.