Abstract
There are many types of non-volatile memory devices but they are generally constructed from silicon. With the development of transparent organic thin film transistors, there is a need to also develop memory devices to allow the complete integration of digital circuitries. The aim of this research is to develop a fabrication route of an all-solution processing of optically transparent organic field effect transistor-based non-volatile memory (OFET-NVM). The OFET-NVMs can be programmed and erased at a relatively low voltage (±15 V). The OFET-NVM has a charge mobility of 0.125 cm2/V-s, threshold voltage shift of approximately 3 V between programmed and erased transistor and a sub-threshold slope of 1.5 V/decade. Although these figure-of-merits are not comparable to its silicon counterpart, the creation of an all solution processed OFET-NVM that is optically transparent (~70–85%) has been demonstrated.
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