Abstract
AbstractEffect of electric field on the crystallization of ZnO sol‐gel films was investigated by measuring x‐ray diffraction (XRD) patterns, photoluminescence (PL) spectra, and current‐voltage (I‐V) characteristics of n‐ZnO/p‐Si heterojunctions. When sol‐gel ZnO films (undoped and Al‐doped) were crystallized at 800 °C in air for 10 min, an electric field was applied between 0 and 2.0 kV/cm. As the electric field was increased, the XRD (002) peak intensity increased and had a maximum value at 1.5 and 2.0 kV/cm for the films on quartz and silicon substrates, respectively. The Hall carrier mobility increased and the carrier concentration decreased for the crystallized undoped and Al‐doped films when the electric field was 1.0 kV/cm and 1.5 kV/cm, respectively. As the electric field was increased from 0 to 2.0 kV/cm, the forward current increased and the reverse current decreased for n‐ZnO/p‐Si heterojunctions. These results indicated that application of electric fields was an effective means to reduce the defect density of ZnO sol‐gel films and to improve their heterojunction characteristics.
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